Dynamic nuclear spin polarization in an all-semiconductor spin injection device with (Ga,Mn)As/n-GaAs spin Esaki diode
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چکیده
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Electrical spin injection and detection in lateral all-semiconductor devices
Both electrical injection and detection of spin-polarized electrons are demonstrated in a single wafer allsemiconductor GaAs-based lateral spintronic device, employing p+Ga,Mn As /n+-GaAs ferromagnetic Esaki diodes as spin aligning contacts. Spin-dependent phenomena, such as spin precession and spin-valve effect, are observed in nonlocal signal and the measurements reveal the unusual origin of ...
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The Landauer-Büttiker formalism combined with the tight-binding transfer matrix method is used to describe the results of recent experiments: the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both TMR and Zener spin current polarization, the calculated values agree well with those observed experimen...
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We investigate the nonlocal Hanle effect in high mobility two-dimensional electron systems using (Ga,Mn)As/GaAs spin Esaki diodes as spin selective contacts. Spin signals in these systems can be strongly affected by dynamic nuclear polarization, which mimics long spin-relaxation times extracted from the measured Hanle curves. Here, we introduce a method which largely suppresses these effects by...
متن کاملSPIN-DEPENDENT TRANSPORT IN Mn DOPED GaAs AND GaN DIODES
OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNLOGY P.O. BOX 1000, FI-02015 TKK http://www.tkk.fi Author Heikki Holmberg Name of the dissertation Spin-dependent transport in Mn Doped GaAs and GaN diodes Manuscript submitted 16.11.2007 Manuscript revised 4.2.2008 Date of the defence 14.3.2008 Monograph Article dissertation (summary + original articles) Faculty Faculty of Electronics, Commu...
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تاریخ انتشار 2016